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| HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFT 30N50 IXFH/IXFT 32N50 500 V 500 V ID25 30 A 32 A RDS(on) 0.16 W 0.15 W trr 250 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAS EAR dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions T J = 25C to 150C T J = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C pulse width limited by TJM TC = 25C TC = 25C ID = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C 30 30N50 32N50 30N50 32N50 30N50 32N50 Maximum Ratings 500 500 20 V 30 32 120 128 30 32 1.5 45 5 360 -55 ... +150 150 -55 ... +150 V V V D (TAB) A A A A A A J mJ V/ns W C C C C Nm/lb.in. g TO-268 (D3) Case Style G S G = Gate, S = Source, (TAB) D = Drain, TAB = Drain Features 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13/10 6 * * * * Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 0.102 2 -0.206 100 TJ = 25C TJ = 125C 200 1 0.15 0.16 4 V %/K V %/K nA mA mA W W International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated * Low package inductance - easy to drive and to protect * Fast intrinsic Diode Applications VDSS VGS = 0 V, ID = 1 mA VDSS temperature coefficient VDS = VGS, ID = 4 mA VGS(th) temperature coefficient VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V VGS = 10 V, ID = 15A * DC-DC converters * Battery chargers * Switched-mode and resonant-mode power supplies VGS(th) IGSS IDSS RDS(on) * DC choppers * AC motor control * Temperature and lighting controls Advantages 32N50 30N50 Pulse test, t 300 ms, duty cycle d 2 % * Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) * Space savings * High power density 97518H (6/99) IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2000 IXYS All rights reserved 1-4 IXFH 30N50 IXFT 30N50 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 18 5200 640 240 35 42 110 26 227 29 110 0.25 28 5700 750 310 45 50 140 35 300 40 145 0.35 (TO-247 Case Style) S pF pF pF ns ns ns ns nC nC nC K/W K/W IXFH 32N50 IXFT 32N50 TO-247 AD (IXFH) Outline gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 ID25, pulse test VGS = 0 V, VDS = 25 V, f = 1 MHz VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 2 W (External) VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Dim. Millimeter Min. Max. A B C D E F 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM IF = IS -di/dt = 100 A/ms, VR = 100 V Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 30N50 32N50 30N50 32N50 30 32 120 128 1.5 250 400 0.85 8 A A A A V ns ns mC A G H J K L M N 1.5 2.49 IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % TJ = 25C TJ = 125C TJ = 25C TJ = 25C TO-268AA (D3 PAK) Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Min. Recommended Footprint (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFH 30N50 IXFT 30N50 Figure 1. Output Characteristics at 25OC 80 70 60 TJ = 25OC VGS=10V 9V 8V 7V IXFH 32N50 IXFT 32N50 Figure 2. Output Characteristics at 125OC 60 TJ = 125OC VGS=10V 9V 8V 7V 50 ID - Amperes 50 40 30 20 10 0 5V ID - Amperes 6V 40 30 6V 5V 20 10 0 4 8 12 16 20 0 0 4 8 12 16 20 VDS - Volts VDS - Volts Figure 3. RDS(on) normalized to 15A/25OC vs. ID 2.8 VGS = 10V Figure 4. RDS(on) normalized to 15A/25OC vs. TJ 2.8 VGS = 10V RDS(ON) - Normalized Tj=1250 C RDS(ON) - Normalized 2.4 2.0 1.6 2.4 ID = 32A 2.0 1.6 1.2 0.8 25 ID = 16A Tj=250 C 1.2 0.8 0 10 20 30 40 50 60 50 75 100 125 150 ID - Amperes TJ - Degrees C Figure 5. Drain Current vs. Case Temperature 40 32 IXFH32N50 Figure 6. Admittance Curves 50 40 ID - Amperes 24 16 8 0 -50 ID - Amperes IXFH30N50 30 TJ = 125oC 20 TJ = 25oC 10 0 -25 0 25 50 75 100 125 150 0 2 4 6 8 TC - Degrees C VGS - Volts (c) 2000 IXYS All rights reserved 3-4 IXFH 30N50 IXFT 30N50 Figure 7. Gate Charge 14 12 10 Vds=300V ID=30A IG=10mA IXFH 32N50 IXFT 32N50 Figure 8. Capacitance Curves 4500 4000 F = 1MHz Ciss Capacitance - pF 3500 3000 2500 2000 VGS - Volts 8 6 4 2 0 0 50 100 150 200 250 300 Coss 1500 1000 Crss 500 0 0 5 10 15 20 25 Gate Charge - nC VDS - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode 100 VGS= 0V 30 1 ms 10 ms 100 ms 1 TC = 25 C O 80 10 ID - Amperes 60 TJ=125OC 40 ID - Amperes DC 20 TJ=25OC 0 0.4 0.1 0.6 0.8 1.0 1.2 10 100 500 VSD - Volts VDS - Volts Figure 10. Transient Thermal Resistance 0.40 0.35 0.30 R(th)JC - K/W 0.25 0.20 0.15 0.10 0.05 0.00 10-3 10-2 10-1 100 101 Pulse Width - Seconds (c) 2000 IXYS All rights reserved 4-4 |
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